Agilent Technologies Agilent E5250A Dokumentacja Pobierz pdf

Introduction

For next generation ULSI development,

precise characteristics evaluation of

semiconductors during device devel-

opment, process development, and

circuit design phase is essential. As

well as IV measurement, C-V measure-

ments are very important to determine

the oxide thickness. Other important

parameters such as substrate impurity

concentration can also be calculated

from C-V measurement results.

Also, improvement of test productivity

is mandatory for faster IC development.

This application note explains how

to perform accurate and efficient

C-V characteristics measurements

of multiple devices by changing con-

nections using the Agilent E5250A

Matrix Switch.

Difficulties in Device

Characterization

On Test Element Groups (TEG), there

are various devices. They are for dc

characteristics measurements and

for C-V measurements. So, to improve

test efficiency, it is necessary to auto-

mate the changing of measurement

instrument connections and multi-

probing on the wafer. A switching

matrix is required to automate

switching measurement instruments

and test devices.

Until now, there has been no suitable

switching matrix for precise low cur-

rent measurements and accurate

capacitance measurements. Using

existing switching matrices, the per-

formance of measurement instruments

was sacrificed. C-V measurement

results included big error due to the

residual impedance in the extension

cables and matrices. It was also diffi-

cult to compensate for the measure-

ment error.

For precise testing, you had to per-

form IV and/or C-V measurements on

separate probing stations. There was

no adequate matrix available to com-

bine these into one probe station.

Therefore, the biggest issue was that

measurement productivity was lowered

because you had to manually switch

measurement instruments and devices.

Accurate and Efficient C-V Measurements

Application Note E5250A-3

Agilent E5250A Low Leakage Switch Mainframe

Figure 1. Agilent 4156C, 4284A, and E5250A with wafer prober

1 2 3 4 5 6 7 8

Podsumowanie treści

Strona 1 - Application Note E5250A-3

IntroductionFor next generation ULSI development,precise characteristics evaluation ofsemiconductors during device devel-opment, process development,

Strona 2 - Instrument Connection

2Solution Using the Agilent E5250ALow Leakage Switch MainframeThe Agilent E5250A Low LeakageSwitch Mainframe provides the solutions to those problems.

Strona 3 - Device Connection

3Maximum lengths for triaxial andcoaxial cables are 3 m and 2 m,respectively.The Agilent P/N 8120-4461 coaxialcable has a semiconductor layer tominimi

Strona 4 - Open Calibration

4The outer conductor of coaxial cablesworks as a shield to minimize straycapacitance between center conduc-tors and circuit common. The outerconductor

Strona 5 - Using Agilent ICS

5Capacitance Measurement Using Agilent ICSTo measure capacitance using AgilentICS, perform the following steps. TheC-V driver (Agilent E5232B) and Mat

Strona 6

6• Setup Matrix SwitchFigure 12 is the matrix switch setupdialog box, which allows you toeasily control the matrix switches.Click cross point boxes of

Strona 7 - Compensation Using Agilent

7Compensation Using Agilent IBASIC ProgramCapacitance compensation routine is available as a sample program on a diskette furnished with AgilentE5250A

Strona 8 - 5965-5658E

• Measurement Circuit ModeIf your device has large resistancein series, it may be necessary toconvert measured parallel capaci-tance (Cp) and conducta